BU2708AF DATASHEET PDF

isc website: 1 isc Silicon NPN Power Transistor. BUAF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS)= V (Min ). BUAF BUAF; Silicon Diffused Power Transistor;; Package: SOT (3- lead TOF). High voltage, high speed switching npn transistor in a plastic. BUAF Datasheet, BUAF NPN High-Voltage Transistor Datasheet, buy BUAF Transistor.

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BU2708AF Datasheet PDF

A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit.

A voltage or current applied to one pair of the transistor’s terminals changes the current flowing through another pair of terminals. Because the controlled output power can be higher than the controlling input power, a transistor can amplify a signal.

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Bipolar transistors are so named because their operation involves both electrons and holes. These two kinds of charge carriers are characteristic of the two kinds of doped semiconductor material.

In contrast, unipolar transistors such as the field-effect transistors have only one kind of charge carrier. NPN is one of the two types of bipolar transistors, consisting of a layer of P-doped semiconductor the “base” between bu27008af N-doped layers. A small current entering the base is amplified to produce a large collector and emitter current.

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BUAF Datasheet pdf – Silicon Diffused Power Transistor – Philips

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Free technical support If something goes wrong, we will be ready and willing to help! Fluke, Mikroelektronika, Knipex and Logitech. Comfort Flexible options, including door to door transportation. Add to cart On stock. Collector – Base Voltage Vcbo.

BU2708AF Datasheet

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